參數(shù)資料
型號(hào)： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫(xiě)Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制
文件頁(yè)數(shù)： 63/96頁(yè)
文件大?。?/td> 827K
代理商： S29PL-J60BAW011
September 22, 2006 S29PL-J_00_A9
S29PL-J
61
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
15.9
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation so that
data can read from any non-suspended sector. When the Program Suspend command is written during a
programming process, the device halts the programming operation within t
PSL
(program suspend latency)
and updates the status bits. Addresses are “don’t-cares” when writing the Program Suspend command. After
the programming operation has been suspended, the system can read array data from any non-suspended
sector. The Program Suspend command may also be issued during a programming operation while an erase
is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend.
If a read is needed from the Secured Silicon Sector area, then user must use the proper command
sequences to enter and exit this region. The system may also write the autoselect command sequence when
the device is in Program Suspend mode. The device allows reading autoselect codes in the suspended
sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the
device reverts to Program Suspend mode, and is ready for another valid operation. See “Autoselect
Command Sequence” for more information. After the Program Resume command is written, the device
reverts to programming. The system can determine the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See “Write Operation Status” for more
information. The system must write the Program Resume command (address bits are “don’t care”) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program Resume
command are ignored. Another Program Suspend command can be written after the device has resumed
programming.
15.10 Command Definitions Tables
Table 15.1 on page 62
contains the Memory Array Command Definitions.
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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