參數(shù)資料
型號(hào): S29PL-J60BAW011
廠商: Spansion Inc.
元件分類(lèi): DRAM
英文描述: CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述: CMOS 3V電壓供電,同步讀/寫(xiě)Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制
文件頁(yè)數(shù): 74/96頁(yè)
文件大小: 827K
代理商: S29PL-J60BAW011
72
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
20. AC Characteristic
20.1
Test Conditions
Figure 20.1
Test Setups
3.6 V
Note
Diodes are IN3064 or equivalent
20.2
Switching Waveforms
Table 20.1
Test Specifications
Test Conditions
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
V
= 1.8 V
(PL127J AND PL129J)
5
ns
V
IO
= 3.0 V
Input Pulse Levels
V
= 1.8 V
(PL127J AND PL129J)
0.0 - 1.8
V
V
IO
= 3.0 V
0.0–3.0
Input timing measurement reference levels
V
IO
/2
V
Output timing measurement reference levels
V
IO
/2
V
2.7 k
Ω
C
L
6.2 k
Ω
Device
Under
Test
C
L
Device
Under
Test
V
IO
= 3.0 V
V
IO
= 1.8 V (PL127J and PL129J)
Table 20.2
Key To Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
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S29PL-J60BAW022 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control