參數(shù)資料
型號： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強(qiáng)VersatileIO控制
文件頁數(shù)： 24/96頁
文件大?。?/td> 827K
代理商： S29PL-J60BAW011
22
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
10.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# (CE1# or CE#2 in PL129J) to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four.
Word Program
Command Sequence
on page 57
has details on programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 10.4 on page 21
indicates the set of address space that each sector occupies. A “bank address” is the set of address bits
required to uniquely select a bank. Similarly, a “sector address” refers to the address bits required to uniquely
select a sector.
Command Definitions
on page 55
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
I
CC2
in the DC Characteristics table represents the active current specification for the write mode. See the
timing specification tables and timing diagrams in section
Reset
on page 75
for write operations.
10.3.1
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This function is primarily
intended to allow faster manufacturing throughput at the factory.
If the system asserts V
HH
on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the
time required for program operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing V
HH
from the WP#/ACC pin returns the device to normal
operation.
Note that V
HH
must not be asserted on WP#/ACC for operations other than accelerated
programming, or device damage may result. In addition, the WP#/ACC pin should be raised to V
CC
when not
in use. That is, the WP#/ACC pin should not be left floating or unconnected; inconsistent behavior of the
device may result.
10.3.2
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on
DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to the
Table 10.9,
Secured Silicon Sector
Addresses
on page 39
and
Autoselect Command Sequence
on page 56
for more information.
10.4
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# (CE1#,CE#2 in PL129J) and RESET# pins are
both held at V
IO
± 0.3 V. (Note that this is a more restricted voltage range than V
IH
.) If CE# (CE1#,CE#2 in
PL129J) and RESET# are held at V
IH
, but not within V
IO
± 0.3 V, the device will be in the standby mode, but
the standby current will be greater. The device requires standard access time (t
CE
) for read access when the
device is in either of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
ICC3 in
DC Characteristics
on page 71
represents the CMOS standby current specification.
相關(guān)PDF資料
PDF描述
S29PL-J60BAW012 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW021 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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