參數(shù)資料
型號(hào)： S29PL-J60BAW011
廠商： Spansion Inc.
元件分類： DRAM
英文描述： CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
中文描述： CMOS 3V電壓供電，同步讀/寫Flash存儲(chǔ)器并有增強(qiáng)VersatileIO控制
文件頁數(shù)： 86/96頁
文件大小： 827K
代理商： S29PL-J60BAW011
84
S29PL-J
S29PL-J_00_A9 September 22, 2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Note
This parameter is defined for CE1#/CE2# recover time for read/read, program/read, and read/program operations. Program/program operation are not allowed and
only a single program operation is allowed at one time.
Figure 21.4
Timing Diagram for Alternating Between CE1# and CE2# Control
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
CC
, 100,000 cycles. Additionally, programming typicals
assume checkerboard pattern. All values are subject to change.
2. Under worst case conditions of 90°C, V
CC
= 2.7 V, 1,000,000 cycles. All values are subject to change.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 15.1
on page 62
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Table 21.3
CE1#/CE2# Timing (S29PL129J only)
Parameter
Description
All Speed Options
Unit
JEDEC
Std
t
CCR
CE1#/CE2# Recover Time
(See Note)
Min
0
ns
Table 21.4
Erase And Programming Performance
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
2
sec
Excludes 00h programming
prior to erasure
(Note 4)
Chip Erase Time
PL127J/129J
135
216
sec
PL064J
71
113.6
sec
PL032J
39
62.4
sec
Word Program Time
6
100
μs
Excludes system level
overhead
(Note 5)
Accelerated Word Program Time
4
60
μs
Chip Program Time
(Note 3)
PL127J/129J
50.4
200
sec
PL064J
25.2
50.4
sec
PL032J
12.6
25.2
sec
CE1#
t
CCR
t
CCR
CE2#
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL-J60BAW012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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S29PL-J60BAW020 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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S29PL-J60BAW022 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
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