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參數資料
| 型號： | S29PL-J60BAW011 |
| 廠商： | Spansion Inc. |
| 元件分類： | DRAM |
| 英文描述： | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| 中文描述： | CMOS 3V電壓供電，同步讀/寫Flash存儲器并有增強VersatileIO控制 |
| 文件頁數： | 55/96頁 |
| 文件大?。?/td> | 827K |
| 代理商： | S29PL-J60BAW011 |
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September 22, 2006 S29PL-J_00_A9
S29PL-J
53
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 14.1
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 14.2
System Interface String
Addresses
Data
Description
1Bh
0027h
V
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
Typical timeout for Min. size buffer write 2
N
μ
s (00h = not supported)
Typical timeout per individual block erase 2
N
ms
1Fh
0003h
20h
0000h
21h
0009h
22h
0000h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2
N
times typical
24h
0000h
Max. timeout for buffer write 2
N
times typical
25h
0004h
Max. timeout per individual block erase 2
N
times typical
26h
0000h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
相關PDF資料 |
PDF描述 |
|---|---|
| S29PL-J60BAW012 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW013 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW020 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW021 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW022 | CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S29PL-J60BAW012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW020 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW021 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
| S29PL-J60BAW022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control |
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