50
DS1454
AMCC Confidential and Proprietary
S19237 – SONET STS-192/10GbE CMOS Transceiver
with ISI Compensation
Data Sheet
Table 24. Recommended Operating Conditions
The device will meet all electrical specifications at junction temperature under bias of 125C but part lifetime and reliability will be reduced. It is recommended that
prudent thermal management techniques are used to maximize device lifetime.
Parameter
Min
Typ
Max
Units
Conditions
Ambient temperature under bias
-40
+85
°C
Junction temperature under bias
105
125
°C
Note: AMCC recommends that the
device is predominantly operated at or
below the specified typical junction
temperature.
Voltage on VDD_1.2aV with respect to GND
1.14
1.20
1.26
V
All +1.2V Supplies Minus AVDD_RX
Voltage on VDD_1.2bV with respect to GND
1.10a
1.20
1.26
V
AVDD_RX Power Supply Only
Voltage on VDD_1.8 V with respect to GND
1.71
1.80
1.89
V
Voltage on VDD_1.8 V with respect to GND
(when using a 3.3 V supply)
3.135
3.3
3.465
V
ICC_1.2 V supply current
733
899
mA
ICC_1.8 V supply current (with 1.8 V or 3.3
V supply)
87
114
mA
Power dissipation (when using 1.2 V and
1.8 V supplies)
1.037
1.349b
W
Power dissipation (when using 1.2 V and
3.3 V supplies)
1.167
1.529b
W
Power supply noise rejection for 1.2 V
power supply
(6 kHz – 2 MHz)
50
mVP-P
Power supply noise rejection for 1.8 V
power supply
(6 kHz – 2 MHz)
50
mVP-P
a.Consult application note AN2087, Extended Low-End VCO Margin, for additional details. See Table 19 for VDD_1.2bV pin assignments/descriptions. b.Use maximum Power Dissipation and
Table 21 for Thermal Management considerations.
Table 25. LVCMOS Input/Output Characteristics
Parameter
Description
Min
Typ
Max
Units
Conditions
VIH
Input high-voltage
VDD_1.8 CMOS - 0.4
V
VIL
Input low-voltage
0.4
V
IIH
Input high current
60
A
IIL
Input low current
60
A
VOH
Output high-voltage
VDD_1.8 CMOS - 0.2
V
IOH = -600 A
VOL
Output low-voltage
0.2
V
IOL = 600 A