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參數(shù)資料
| 型號： | MT16LSDT12864AG-133XX |
| 元件分類： | DRAM |
| 英文描述： | 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| 封裝： | MO-161, DIMM-168 |
| 文件頁數(shù)： | 9/28頁 |
| 文件大?。?/td> | 954K |
| 代理商： | MT16LSDT12864AG-133XX |
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PDF: 09005aef8088b2e3/Source: 09005aef8088077a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
17
2002 Micron Technology, Inc. All rights reserved.
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
AC Operating Specifications
Data-out High-Z time
CL = 3
tHZ(3)
5.4
ns
CL = 2
tHZ(2)
5.4
6
ns
Data-out Low-Z time
tLZ
1
ns
Data-out hold time (load)
tOH
2.7
ns
Data-out hold time (no load)
tOH
N
1.8
ns
ACTIVE-to-PRECHARGE command
tRAS
37
120,000
44
120,000
ns
ACTIVE-to-ACTIVE command period
tRC
60
66
ns
ACTIVE-to-READ or WRITE delay
tRCD
15
20
ns
Refresh period (8,192 rows)
tREF
64
ms
Auto refresh period
tRFC
66
ns
PRECHARGE command period
tRP
15
20
ns
ACTIVE bank a to ACTIVE bank b command
tRRD
14
15
ns
Transition time
tT
0.3
1.2
0.3
1.2
ns
WRITE recovery time
tWR
1 CLK
+ 7ns
1 CLK
+ 7ns
ns
14
15
ns
Exit SELF REFRESH-to-ACTIVE command
tXSR
67
75
ns
Table 17:
AC Functional Characteristics
Parameter
Symbol
-13E
-133
Units
Notes
READ/WRITE command to READ/WRITE command
tCCD
1
tCK
CKE to clock disable or power-down entry mode
tCKED
1
tCK
CKE to clock enable or power-down exit setup mode
tPED
1
tCK
DQM to input data delay
tDQD
0
tCK
DQM to data mask during WRITEs
tDQM
0
tCK
DQM to data High-Z during READs
tDQZ
2
tCK
WRITE command to input data delay
tDWD
0
tCK
Data-into ACTIVE command
tDAL
4
5
tCK
Data-into PRECHARGE command
tDPL
2
tCK
Last data-in to burst STOP command
tBDL
1
tCK
Last data-in to new READ/WRITE command
tCDL
1
tCK
Last data-into PRECHARGE command
tRDL
2
tCK
LOADMODEREGISTER command to ACTIVE or REFRESH command
tMRD
2
tCK
Data-out to High-Z from PRECHARGE command
CL = 3
tROH(3)
3
tCK
CL = 2
tROH(2)
2
tCK
Table 16:
Electrical Characteristics and Recommended AC Operating Conditions (continued)
Notes: 5, 6, 8, 9, 11, 31; notes appear on page 18
Module AC timing parameters comply with PC100 and PC133 Design Specs, based on component parameters
AC Characteristics
Symbol
-13E
-133
Units
Notes
Parameter
Min
Max
Min
Max
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT16LSDT12864AG-13EC1 | 功能描述:MODULE SDRAM 1GB 168DIMM RoHS:否 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT16LSDT1664A | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8,16 MEG x 64 SDRAM DIMMs |
| MT16LSDT1664AG-10CC7 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1GBIT 168UDIMM - Trays |
| MT16LSDT1664AG-10EC1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1GBIT 168UDIMM - Trays |
| MT16LSDT1664AG-10EF7 | 制造商:Micron Technology Inc 功能描述:168-Pin SDRAM DIMMs (x64) |
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