參數(shù)資料
型號: MT16LSDT12864AG-133XX
元件分類: DRAM
英文描述: 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封裝: MO-161, DIMM-168
文件頁數(shù): 15/28頁
文件大?。?/td> 954K
代理商: MT16LSDT12864AG-133XX
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
22
2002 Micron Technology, Inc. All rights reserved.
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
Serial Presence Detect
Figure 10:
SPD EEPROM Timing Diagram
Table 20:
SERIAL Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +2.3V to +3.6V
Parameter/Condition
Symbol
Min
Max
Units
Supply voltage
VDD
33.6
V
Input high voltage: Logic 1; All inputs
VIH
VDD × 0.7
VDD + 0.5
V
Input low voltage: Logic 0; All inputs
VIL
-1
VDD × 0.3
V
Output low voltage: IOUT = 3mA
VOL
–0.4
V
Input leakage current: VIN = GND to VDD
ILI
–10
A
Output leakage current: VOUT = GND to VDD
ILO
–10
A
Standby current: SCL = SDA = VDD - 0.3V; All other inputs = GND or
3.3V ±10%
–30
A
Power supply current:
SCL Clock frequency = 100 KHz
ICC Write
ICC Read
3
1
mA
Table 21:
Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +2.3V to +3.6V
Parameter/Condition
Symbol
Min
Max
Units
Notes
SCL LOW to SDA data-out valid
tAA
0.2
0.9
s
Time the bus must be free before a new transition can start
tBUF
1.3
s
Data-out hold time
tDH
200
ns
SDA and SCL fall time
tF300
ns
Data-in hold time
tHD:DAT
0
s
Start condition hold time
tHD:STA
0.6
s
Clock HIGH period
tHIGH
0.6
s
Noise suppression time constant at SCL, SDA inputs
tI50
ns
Clock LOW period
tLOW
1.3
s
SDA and SCL rise time
tR0.3
s
SCL clock frequency
fSCL
400
KHz
SCL
SDA IN
SDA OUT
tLOW
tSU:STA
tHD:STA
tF
tHIGH
tR
tBUF
tDH
tAA
tSU:STO
tSU:DAT
tHD:DAT
UNDEFINED
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