參數(shù)資料
型號(hào)： MT16LSDT12864AG-133XX
元件分類： DRAM
英文描述： 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封裝： MO-161, DIMM-168
文件頁(yè)數(shù)： 27/28頁(yè)
文件大小： 954K
代理商： MT16LSDT12864AG-133XX
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
8
2002 Micron Technology, Inc. All rights reserved.
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
Mode Register Definition
INHIBIT or NOP. Starting at some point during this 100s period and continuing at least
through the end of this period, COMMAND INHIBIT or NOP commands should be
applied.
Once the 100s delay has been satisfied with at least one COMMAND INHIBIT or NOP
command having been applied, a PRECHARGE command should be applied. All device
banks must then be precharged, thereby placing the device in the all banks idle state.
Once in the idle state, two AUTO refresh cycles must be performed. After the AUTO
refresh cycles are complete, the SDRAM is ready for mode register programming.
Because the mode register will power up in an unknown state, it should be loaded prior
to applying any operational command.
Mode Register Definition
The mode register is used to define the specific mode of operation of the SDRAM. This
definition includes the selection of a burst length, a burst type, a CAS latency, an operat-
ing mode and a write burst mode, as shown in the Mode Register Definition Diagram.
The mode register is programmed via the LOAD MODE REGISTER command and will
retain the stored information until it is programmed again or the device loses power.
Mode register bits M0–M2 specify the burst length, M3 specifies the type of burst
(sequential or interleaved), M4–M6 specify the CAS latency, M7 and M8 specify the oper-
ating mode, M9 specifies the write burst mode, and M10 and M11 are reserved for future
use.
The mode register must be loaded when all device banks are idle, and the controller
must wait the specified time before initiating the subsequent operation. Violating either
of these requirements will result in unspecified operation.
Burst Length
Read and write accesses to the SDRAM are burst oriented, with the burst length being
programmable, as shown in Mode Register Definition Diagram. The burst length deter-
mines the maximum number of column locations that can be accessed for a given READ
or WRITE command. Burst lengths of 1, 2, 4, or 8 locations are available for both the
sequential and the interleaved burst types, and a full-page burst is available for the
sequential type. The full-page burst is used in conjunction with the BURST TERMINATE
command to generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation or incompatibility with
future versions may result.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a boundary is reached, as shown in
Table 6 on page 10. The block is uniquely selected by A1–A9 when BL = 2; by A2–A9 when
BL = 4; and by A3–A9 when BL = 8. The remaining (least significant) address bit(s) is (are)
used to select the starting location within the block. Full-page bursts wrap within the
page if the boundary is reached, as shown in Table 6 on page 10.
Burst Type
Accesses within a given burst may be programmed to be either sequential or interleaved;
this is referred to as the burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by the burst length, the burst type
and the starting column address, as shown in Table 6 on page 10.
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參數(shù)描述
MT16LSDT12864AG-13EC1 功能描述:MODULE SDRAM 1GB 168DIMM RoHS:否 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM
MT16LSDT1664A 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8,16 MEG x 64 SDRAM DIMMs
MT16LSDT1664AG-10CC7 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1GBIT 168UDIMM - Trays
MT16LSDT1664AG-10EC1 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1GBIT 168UDIMM - Trays
MT16LSDT1664AG-10EF7 制造商:Micron Technology Inc 功能描述:168-Pin SDRAM DIMMs (x64)
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