- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄296641 > MT18VDVF6472DG-262XX 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 PDF資料下載
參數(shù)資料
| 型號(hào)： | MT18VDVF6472DG-262XX |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封裝： | DIMM-184 |
| 文件頁(yè)數(shù)： | 1/38頁(yè) |
| 文件大?。?/td> | 713K |
| 代理商： | MT18VDVF6472DG-262XX |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
Products and specifications discussed herein are subject to change by Micron without notice.
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
Features
PDF: 09005aef81c73825/Source: 09005aef81c73837
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DVF18C64_128x72D_1.fm - Rev. A 8/05 EN
1
2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
DDR SDRAM VLP Registered DIMM
MT18VDVF6472D – 512MB
MT18VDVF12872D – 1GB
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/modules
Features
184-pin, very low profile dual in-line memory
module (VLP DIMM)
Fast data transfer rates: PC2100 or PC2700
Utilizes 266 MT/s and 333 MT/s DDR SDRAM
components
Registered inputs with one-clock delay
Phase-lock loop (PLL) clock driver to reduce loading
Supports ECC error detection and correction
512MB (64 Meg x 72) and 1GB (128 Meg x 72)
VDD = VDDQ = +2.5V
VDDSPD = +2.3V to +3.6V
2.5V I/O (SSTL_2 compatible)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
Differential clock inputs CK and CK#
Four internal device banks for concurrent operation
Programmable burst lengths: 2, 4, or 8
Auto precharge option
Auto refresh and self refresh modes
7.8125s maximum average periodic refresh
interval
Serial presence detect (SPD) with EEPROM
Programmable READ CAS latency
Gold edge contacts
Dual rank
Figure 1:
184-Pin VLP DIMM (MO-206)
Notes:1. Contact Micron for product availability.
2. CL = CAS (READ) latency; registered mode
adds one clock cycle to CL.
Options
Marking
Package
184-pin DIMM (standard)
G
184-pin DIMM (lead-free)1
Y
Memory clock, speed, CAS latency2
6ns (166MHz), 333 MT/s, CL = 2.5
-335
7.5ns (133 MHz), 266 MT/s, CL = 2
-2621
7.5ns (133 MHz), 266 MT/s, CL = 2
-26A1
7.5ns (133 MHz), 266 MT/s, CL = 2.5
-265
PCB height
Very Low-Profile 0.72in (18.29mm)1
Very Low Profile Height 0.72in (18.29mm)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT18VDVF6472DG-265XX | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| MT2S3216D-20 | 32K X 16 MULTI DEVICE SRAM MODULE, 20 ns, DMA40 |
| MT46H256M32LFCM-5:A | 256M X 32 DDR DRAM, 5 ns, PBGA90 |
| MT46H256M32L2JV-75IT:A | 256M X 32 DDR DRAM, 6 ns, PBGA168 |
| MT46H256M32L4CM-54IT:A | 256M X 32 DDR DRAM, 5 ns, PBGA90 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT-19 | 功能描述:TERM BARRIER 19CIRC DUAL ROW RoHS:是 類(lèi)別:連接器，互連式 >> 接線(xiàn)座 - 隔板塊 系列:M 標(biāo)準(zhǔn)包裝:10 系列:Beau™ 38780 端接塊類(lèi)型:阻隔塊 電路數(shù):15 導(dǎo)線(xiàn)入口數(shù)目:30 間距:0.438"（11.12mm） 行數(shù):2 電流:15A 電壓:300V 線(xiàn)規(guī):14-22 AWG 頂部端子:螺釘 底部端子:焊片 阻擋層類(lèi)型:雙壁（雙） 特點(diǎn):法蘭 顏色:黑 包裝:散裝 安裝類(lèi)型:通孔 工作溫度:- 材料 - 絕緣體:聚對(duì)苯二甲酸丁二酯（PBT），玻璃纖維增強(qiáng)型 材料可燃性額定值:UL94 V-0 其它名稱(chēng):038780-111538780-1115387801115 |
| MT190A | 制造商:Black Box Corporation 功能描述:SMART 64K CSU/DSU |
| MT190AD130 | 制造商:BLACK BOX 功能描述:64K CSU/DSU |
| MT190A-D48 | 制造商:Black Box Corporation 功能描述:Smart 64K CSU/DSUs, 24 48-VDC |
| MT190A-D48-W1 | 制造商:Black Box Corporation 功能描述:1 YEAR WARRANTY FOR MT190A-D48 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。