參數(shù)資料
型號(hào)： MT16LSDT12864AG-133XX
元件分類： DRAM
英文描述： 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封裝： MO-161, DIMM-168
文件頁(yè)數(shù)： 7/28頁(yè)
文件大?。?/td> 954K
代理商： MT16LSDT12864AG-133XX
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
15
2002 Micron Technology, Inc. All rights reserved.
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
IDD Specifications and Conditions
IDD Specifications and Conditions
Note:
a - Value calculated as one module rank in this condition, and all other module ranks in
power-down mode (IDD2).
b - Value calculated reflects all module ranks in this condition.
Table 12:
IDD Specifications and Conditions – 512MB
Notes: 1, 5, 6, 11, 13; notes appear on page 18; VDD, VDDQ = +3.3V ±0.3V; SDRAM component values only
Parameter/Condition
Symbol
Max
Units
Notes
-13E
-133
Operating current: Active mode; Burst = 2; READ or WRITE; tRC =
tRC (MIN)
IDD1
960
880
mA
Standby current: Power-Down mode; All device banks idle; CKE =
LOW
IDD2
28
mA
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All device
banks active after tRCD met; No accesses in progress
IDD3
360
mA
Operating current: Burst Mode; Continuous burst; READ or WRITE;
All device banks active
IDD4
1,000
mA
Auto refresh current
tRFC = tRFC (MIN)
IDD5
1,960
mA
CKE = HIGH; CS# = HIGH
tRFC = 7.8125s
IDD6
48
mA
Self refresh current: CKE
≤ 0.2V
IDD7
48
mA
Table 13:
IDD Specifications and Conditions – 1GB
Notes: 1, 6, 11, 13; notes appear on page 18; VDD, VDDQ = +3.3V ±0.3V; SDRAM component values only
Parameter/Condition
Symbol
Max
Units
Notes
-13E
-133
Operating current: Active mode; Burst = 2; READ or WRITE;
tRC = tRC (MIN)
IDD1a
1,112
1,008
mA
Standby current: Power-Down mode; All device banks idle;
CKE = LOW
IDD2b
63
mA
Standby current: Active mode; CKE = HIGH; CS# = HIGH; All device
banks active after tRCD met; No accesses in progress
IDD3a
437
mA
Operating current: Burst Mode; Continuous burst; READ or WRITE;
All device banks active
IDD4a
1,157
mA
Auto refresh current
tRFC = tRFC (MIN)
IDD5b
4,410
mA
CKE = HIGH; CS# = HIGH
tRFC = 7.8125s
IDD6b
108
mA
Self refresh current: CKE
≤ 0.2V
IDD7b
108
mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT16LSDT12864AG-13EC1 功能描述:MODULE SDRAM 1GB 168DIMM RoHS:否 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM
MT16LSDT1664A 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8,16 MEG x 64 SDRAM DIMMs
MT16LSDT1664AG-10CC7 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1GBIT 168UDIMM - Trays
MT16LSDT1664AG-10EC1 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 1GBIT 168UDIMM - Trays
MT16LSDT1664AG-10EF7 制造商:Micron Technology Inc 功能描述:168-Pin SDRAM DIMMs (x64)
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