參數(shù)資料
型號(hào): MT16LSDT12864AG-133XX
元件分類: DRAM
英文描述: 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封裝: MO-161, DIMM-168
文件頁數(shù): 17/28頁
文件大?。?/td> 954K
代理商: MT16LSDT12864AG-133XX
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
24
2002 Micron Technology, Inc. All rights reserved.
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
Serial Presence Detect
Table 22:
Serial Presence-Detect Matrix
VDD = +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
Byte
Description
Entry (Version)
MT8LSDT6464A
MT16LSDT12864A
0
Number of bytes used by Micron
128
80
1
Total number of SPD memory bytes
256
08
2
Memory type
SDRAM
04
3
Number of row addresses
13
0D
4
Number of column addresses
11
0B
5
Number of module ranks
1 or 2
01
02
6
Module data width
64
40
7
Module data width (continued)
000
00
8
Module voltage interface levels
LVTTL
01
9
SDRAM cycle time, tCK
(CAS latency = 3)
7ns (-13E)
7.5ns (-133)
70
75
70
75
10
SDRAM access from Clock, tAC
(CAS latency = 3)
5.4ns (-13E/-133)
54
11
Module configuration type
NON-ECC
00
12
Refresh rate/type
7.8125s/SELF
82
13
SDRAM width (primary SDRAM)
808
08
14
Error-checking SDRAM data width
NONE
00
15
Minimum clock delay from back-to-back random
column addresses, tCCD
101
01
16
Burst lengths supported
1, 2, 4, 8, PAGE
8F
17
Number of banks on SDRAM device
404
04
18
CAS latencies supported
2, 3
06
19
CS latency
001
01
20
WE latency
001
01
21
SDRAM module attributes
UNBUFFERED
00
22
SDRAM device attributes: general
0E
23
SDRAM cycle time, tCK
(CAS latency = 2)
7.5ns (13E)
10ns (-133)
75
A0
75
A0
24
SDRAM access from clock, tAC
(CAS latency = 2)
5.4ns (-13E)
6ns (-133)
54
60
54
60
25
SDRAM cycle time, tCK, (CAS latency = 1)
00
26
SDRAM access from clock, tAC, (CAS latency = 1)
00
27
Minimum row precharge time, tRP
15ns (-13E)
20ns (-133)
0F
14
0F
14
28
Minimum row active to row active, tRRD
14ns (-13E)
15ns (-133)
0E
0F
0E
0F
29
Minimum RAS# to CAS# delay, tRCD
15ns (-13E)
20ns (-133)
0F
14
0F
14
30
Minimum RAS# pulse width, tRAS (see note 1)
45ns (-13E)
44ns (133)
2D
2C
2D
2C
31
Module rank density
512MB
80
32
Command and address setup time, tAS, tCMS
1.5ns (-13E/-133)
15
33
Command and address hold time, tAH, tCMH
0.8ns (-13E/-133)
08
34
Data signal input setup time, tDS
1.5ns (-13E/-133)
15
35
Data signal input hold time, tDH
0.8ns (-13E/-133)
08
36-40
Reserved
00
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