參數(shù)資料
型號(hào)： MT16LSDT12864AG-133XX
元件分類： DRAM
英文描述： 128M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
封裝： MO-161, DIMM-168
文件頁(yè)數(shù)： 1/28頁(yè)
文件大?。?/td> 954K
代理商： MT16LSDT12864AG-133XX
Products and specifications discussed herein are subject to change by Micron without notice.
512MB (SR), 1GB (DR): (x64) 168-Pin SDRAM UDIMM
Features
PDF: 09005aef8088b2e3/Source: 09005aef8088077a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SD8_16C64_128x64AG.fm - Rev. C 6/05 EN
1
2002 Micron Technology, Inc. All rights reserved.
Synchronous DRAM Module
MT8LSDT6464A – 512MB
MT16LSDT12864A – 1GB
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/modules.
Features
PC100- and PC133-compliant
168-pin, dual in-line memory module (DIMM)
Utilizes 125 MHz and 133 MHz SDRAM
components
Unbuffered
512MB (64 Meg x 64), 1GB (128 Meg x 64)
Single +3.3V power supply
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal SDRAM banks for hiding row access/
precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto precharge, including concurrent auto
precharge, and auto refresh modes
64ms, 8,192 cycle auto refresh cycle
Self refresh mode
LVTTL-compatible inputs and outputs
Serial presence-detect (SPD)
Gold edge contacts
Table 1:
Timing Parameters
Module
Marking
Clock
Frequency
Access Time
Setup
Time
Hold
Time
CL = 2
CL = 3
-13E
133 MHz
5.4ns
–
1.5
0.8
-133
133 MHz
–
5.4ns
1.5
0.8
Figure 1:
168-Pin DIMM (MO–161)
Notes: 1. Contact Micron for product availability.
Options
Marking
Package
168-pin DIMM (standard)
G
168-pin DIMM (lead-free)
Memory Clock/CAS Latency
(133 MHz)/CL = 2
-13E
(133 MHz)/CL = 3
-133
PCB
Standard 1.375in. (34.93mm)
See note 1 on
Low-Profile 1.125in. (28.58mm)
See note 1 on
Standard 1.375in. (34.925mm)
Low Profile 1.125in. (28.575mm)
Table 2:
Address Table
Parameter
512MB
1GB
Refresh Count
8K
Device Banks
4 (BA0, BA1)
Device Configuration
512Mb (64 Meg x 8)
Row Addressing
8K (A0–A12)
Column Addressing
2K (A0–A9, A11)
Module Ranks
1 (S0#,S2#)
2 (S0#, S2#; S1#, S3#)
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