
Synchronous Operation
MOTOROLA
Synchronous DRAM Controller Module
7-17
7.3.4
INITIALIZATION SEQUENCE
Synchronous DRAMs have a prescribed initialization sequence. The DRAM controller supports this
sequence with the following procedure:
1. SDRAM control signals are reset to idle state. Wait the prescribed period after reset before any
action is taken on the SDRAMs. This is normally around 100 s.
2. Initialize the DCR, DACR, and DMR in their operational configuration. Do not yet enable PALL or
REF
commands.
3. Issue a PALL command to the SDRAMs by setting DCR[IP] and accessing a SDRAM location. Wait
the time (determined by tRP) before any other execution.
4. Enable refresh (set DACR[RE]) and wait for at least 8 refreshes to occur.
5. Before issuing the MRS command, determine if the DMR mask bits need to be modified to allow the
MRS
to execute properly
6. Issue the MRS command by setting DACR[IMRS] and accessing a location in the SDRAM.
Note:Mode register settings are driven on the SDRAM address bus, so care must be
taken to change DMR[BAM] if the mode register configuration does not fall in the
address range determined by the address mask bits. After the mode register is set,
DMR mask bits can be restored to their desired configuration.
7.3.4.1 MODE REGISTER SETTINGS
It is possible to configure the operation of SDRAMs, namely their burst operation and CAS latency, through
the SDRAM component’s mode register. CAS latency is a function of the speed of the SDRAM and the bus
clock of the DRAM controller. The DRAM controller operates at a CAS latency of 1 or 2.
Although the MCF5249 DRAM controller supports bursting operations, it does not use the bursting
features of the SDRAMs. Because the MCF5249 can burst operand sizes of 1, 2, 4, or 16 bytes long, the
concept of a fixed burst length in the SDRAMs mode register becomes problematic. Therefore, the
MCF5249 DRAM controller generates the burst cycles rather than the SDRAM device. Because the
MCF5249 generates a new address and a READ or WRITE command for each transfer within the burst, the
SDRAM mode register should be set either to a burst length of one or to not burst. This allows bursting to
be controlled by the MCF5249 instead.
The SDRAM mode register is written by setting the associated block’s DACR[IMRS]. First, the base
address and mask registers must be set to the appropriate configuration to allow the mode register to be
set.
Note:Improperly set DMR mask bits may prevent access to the mode register address.
Thus, the user should determine the mapping of the mode register address to the
MCF5249 address bits to find out if an access is blocked. If the DMR setting
prohibits mode register access, the DMR should be reconfigured to enable the
access and then set to its necessary configuration after the MRS command executes.
The associated CBM bits should also be initialized. After DACR[IMRS] is set, the next access to the
SDRAM address space generates the MRS command to that SDRAM. The address of the access should
be selected to place the correct mode information on the SDRAM address pins. The address is not
multiplexed for the MRS command. The MRS access can be a read or write. The important thing is that the
address output of that access needs the correct mode programming information on the correct address
bits.
Figure 7-12 shows the MRS command, which occurs in the first clock of the bus cycle. F
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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