參數(shù)資料
型號(hào): M5M4V4S40CTP-12
廠商: Mitsubishi Electric Corporation
英文描述: 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
中文描述: 4分(2 -銀行甲131072字x 16位)同步DRAM
文件頁(yè)數(shù): 40/45頁(yè)
文件大?。?/td> 1458K
代理商: M5M4V4S40CTP-12
40
M5M4V4S40CTP-12, -15
Feb ‘97
Preliminary
MITSUBISHI LSIs
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev. 0.3)
WRITE with AUTO-PRECHARGE (WRITEA)
BL=4
CLK
/CS
/RAS
/CAS
/WE
CKE
A0-7
A8
BA
DQ
D
D
D
D
tRC
internal precharge starts
this timing depends on BL
DQMU
DQML
tWR + tRP
tRCD
X
Y
X
X
X
Note: WRITEA should
not
be used for Full Page (FP) burst operations.
ACT
ACT
WRITEA
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參數(shù)描述
M5M4V4S40CTP-15 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
M5M4V64S20ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-10L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM