參數(shù)資料
型號(hào): M5M4V4S40CTP-12
廠商: Mitsubishi Electric Corporation
英文描述: 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
中文描述: 4分(2 -銀行甲131072字x 16位)同步DRAM
文件頁(yè)數(shù): 37/45頁(yè)
文件大?。?/td> 1458K
代理商: M5M4V4S40CTP-12
37
M5M4V4S40CTP-12, -15
Feb ‘97
Preliminary
MITSUBISHI LSIs
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
MITSUBISHI ELECTRIC
SDRAM (Rev. 0.3)
DQM Byte control for WRITE to READ (single bank)
BL=4,CL=3
CLK
/CS
/RAS
/CAS
/WE
CKE
DQML
A0-7
A8
BA
DQ
(0-7)
DQ
(8-15)
D
D
D
DQMU
D
D
D
tCAC
Q
Q
Q
Q
Q
Q
X
Y
Y
X
tRAS
tRCD
ACT
READ
PRE
WRITE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M5M4V4S40CTP-15 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
M5M4V64S20ATP-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-10L 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-12 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
M5M4V64S20ATP-8 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM