型號 | 廠商 | 描述 |
ixfh10n60 2 3 4 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh10n65 2 3 4 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh13n65 2 3 4 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh13n90 2 3 4 |
IXYS CORP | HIPERFET Power MOSFTETs |
ixfh12n50 2 3 4 |
IXYS Corporation | RES, FILM, 1.33K, 1%, .100W, 100PPM, 0805 |
ixfh12n100f 2 |
IXYS CORP | HiPerRF Power MOSFETs |
ixft12n100f 2 |
IXYS CORP | HiPerRF Power MOSFETs |
ixfh12n100q 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻1.05Ω的N溝道增強型HiPerFET功率MOSFET) |
ixfh12n50f 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.4Ω的N溝道增強型HiPerFET功率MOSFET) |
ixft12n50f 2 |
IXYS CORP | HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
ixfh12n90q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導(dǎo)通電阻0.9Ω的N溝道增強型HiPerFET功率MOSFET) |
ixfh13 n90 2 3 4 |
IXYS Corporation | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導(dǎo)通電阻0.8Ω的N溝道增強型 HiPerFET功率MOSFET) |
ixfh10n90 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導(dǎo)通電阻1.1Ω的N溝道增強型 HiPerFET功率MOSFET) |
ixfh12n90 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導(dǎo)通電阻0.9Ω的N溝道增強型 HiPerFET功率MOSFET) |
ixft13n90 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfh13n80q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.70Ω的N溝道增強型HiPerFET功率MOSFET) |
ixft13n80q 2 |
IXYS CORP | HiPerFET Power MOSFETs Q Class |
ixfh14n100q2 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr |
ixfh14n100 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfhn100 2 3 4 |
IXYS Corporation | HiPerFET Power MOSFETs |
ixftn100 2 3 4 |
IXYS Corporation | HiPerFET Power MOSFETs |
ixfx14n100 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfx15n100 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfh14n80 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfh14n60 2 3 4 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh15n100q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.725Ω的N溝道增強型HiPerFET功率MOSFET) |
ixfh15n80 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfh15n60 2 3 4 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfh15n65 2 3 4 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh16n90q 2 |
IXYS CORP | HiPerFET Power MOSFETs Q-Class |
ixfk16n90q 2 |
IXYS CORP | HiPerFET Power MOSFETs Q-Class |
ixft16n90q 2 |
IXYS CORP | HiPerFET Power MOSFETs Q-Class |
ixfh16n90 2 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfx16n90 2 |
IXYS CORP | HiPerFET Power MOSFETs |
ixfh20n80q 2 |
IXYS CORP | HiPerFETTM Power MOSFETs Q-Class |
ixfk20n80q 2 |
IXYS CORP | HiPerFETTM Power MOSFETs Q-Class |
ixft20n80q 2 |
IXYS CORP | HiPerFETTM Power MOSFETs Q-Class |
ixfh21n50 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.25Ω的N溝道增強型 HiPerFET功率MOSFET) |
ixfh22n55 2 3 4 |
IXYS CORP | CONN RCPT .100 50POS SNGL TIN |
ixfh24n40 2 3 4 5 6 7 8 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh24n50 2 3 4 5 6 7 8 |
IXYS CORP | 2MM TERMINAL STRIPS |
ixfm17n60 2 3 4 5 6 7 8 |
IXYS Corporation | .050 X .050 MICRO STRIPS |
ixfm17n65 2 3 4 5 6 7 8 |
IXYS Corporation | .050 X .050 MICRO STRIPS |
ixfm8n65 2 3 4 5 6 7 8 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfh40n30 2 3 4 5 6 7 8 |
IXYS CORP | HIPERFET Power MOSFTETs |
ixfm40n30 2 3 4 5 6 7 8 |
IXYS CORP | HIPERFET Power MOSFTETs |
ixfn16n100 2 3 4 5 6 7 8 |
IXYS Corporation | PTC-fuses; for electronic devices; Voltage Rating: 30V; Current Rating: 1.35A; Characteristic: |
ixfn17n80 2 3 4 5 6 7 8 |
IXYS Corporation | PTC-fuses; for electronic devices; Voltage Rating: 30V; Current Rating: 1A; Characteristic: |
ixfm18n65 2 3 4 5 6 7 8 |
IXYS Corporation | HIPERFET Power MOSFTETs |
ixfm19n50 2 3 4 5 6 7 8 |
IXYS Corporation | HIPERFET Power MOSFTETs |