參數(shù)資料
型號： IXFH14N80
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 14 A, 800 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 116K
代理商： IXFH14N80
2 - 4
2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
L2
1.00
1.15
L3 0.25 BSC .010 BSC
L4
3.80
4.10
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.039
.752
.106
.055
.045
.150
.161
TO-268AA (D
3
PAK)
PLUS247
TM
(IXFX) Outline
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
e 5.45 BSC
L
19.81
L1
3.81
Q
5.59
R
4.32
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
A
A
1
A
2
b
b
1
b
2
C
D
E
20.32
4.32
6.20
4.83
Min. Recommended Footprint
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
6
10
S
C
iss
C
oss
C
rss
4500
430
150
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
27
30
ns
ns
ns
ns
V
GS
= 10 V, V
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
(External),
120
30
Q
g(on)
Q
gs
Q
gd
220
30
85
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.35
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
14N100
15N100
14
15
A
A
I
SM
Repetitive;
pulse width limited by T
JM
14N100
15N100
56
60
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t 300 s, duty cycle d 2 %
1.5
V
t
rr
T
J
=
T
J
= 125 C
T
J
=
T
J
= 125 C
T
J
=
T
J
= 125 C
25 C
200
350
ns
ns
C
C
A
A
Q
RM
25 C
1
2
I
RM
25 C
10
15
I
= I
-di/dt = 100 A/ s,
V
R
= 100 V
(TO-247 Case Style)
IXFH14N100
IXFH15N100
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
相關(guān)PDF資料
PDF描述
IXFH14N60 HIPERFET Power MOSFTETs
IXFH15N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.725Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFH15N80 HiPerFET Power MOSFETs
IXFH15N60 HiPerFET Power MOSFETs
IXFH15N65 HIPERFET Power MOSFTETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH14N80P 功能描述:MOSFET DIODE Id14 BVdass800 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH150 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH150N15P 功能描述:MOSFET 170 Amps 150V 0.013 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH150N17T 功能描述:MOSFET 150 Amps 175V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH150N17T2 制造商:IXYS Corporation 功能描述:MOSFET N-CH 175V 150A TO-247
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*