參數(shù)資料
型號： IXFH15N80
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 15 A, 800 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 100K
代理商： IXFH15N80
1 - 4
2000 IXYS All rights reserved
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
Test Conditions
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
Maximum Ratings
800
800
V
V
20
30
V
V
T
C
= 25 C
14N80
15N80
14N80
15N80
14N80
15N80
14
15
56
60
14
15
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
T
C
= 25 C
30
mJ
dv/dt
I
S
T
J
I
DM
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25 C
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
6
g
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
TO-247 AD
Preliminary data
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
96523B (3/98)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
= 3 mA
V
DSS
temperature coefficient
Test Conditions
Characteristic Values
Min. Typ.
Max.
800
V
0.096
%/K
V
GS(th)
V
DS
= V
, I
= 4 mA
V
GS(th)
temperature coefficient
2.0
4.5
V
-0.214
%/K
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 25 C
T
J
= 125 C
14N80
15N80
250
A
1
mA
R
DS(on)
0.70
0.60
Pulse test, t 300 s, duty cycle d 2 %
V
DSS
800 V
800 V
t
rr
250 ns
I
D25
14 A
15 A
R
DS(on)
0.70
0.60
IXFH14N80
IXFH15N80
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH15N80Q 功能描述:MOSFET 800V 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH1605 制造商:IXYS Corporation 功能描述:
IXFH1606 制造商:IXYS Corporation 功能描述:
IXFH160N15T 功能描述:MOSFET 160 Amps 150V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH160N15T2 功能描述:MOSFET Trench T2 HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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