參數(shù)資料
型號(hào)： IXFK16N90Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs Q-Class
中文描述： 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 72K
代理商： IXFK16N90Q
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
900
900
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
16
64
16
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
45
1.5
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
360
W
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
TO-247
TO-264
1.13/10
0.9/6
Nm/lb.in.
Nm/lb.in.
Weight
TO-247
TO-268
TO-264
6
4
g
g
g
10
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
low Q
Avalanche energy and current rated
Fast intrinsic rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
900
3.0
V
V
5.0
200
nA
T
J
= 25 C
T
J
= 125 C
50
2
A
mA
R
DS(on)
0.65
G = Gate
S = Source
TAB = Drain
98668 (11/99)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
Advanced Technical Information
IXFH 16N90Q
IXFK 16N90Q
IXFT 16N90Q
V
DSS
I
D25
R
DS(on)
= 900 V
= 16 A
= 0.65
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFT16N90Q HiPerFET Power MOSFETs Q-Class
IXFH16N90 HiPerFET Power MOSFETs
IXFX16N90 HiPerFET Power MOSFETs
IXFH20N80Q HiPerFETTM Power MOSFETs Q-Class
IXFK20N80Q HiPerFETTM Power MOSFETs Q-Class
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK170N10 功能描述:MOSFET 170 Amps 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK170N10P 功能描述:MOSFET PolarHT HiperFET 100v, 170A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK170N20P 功能描述:MOSFET 170 Amps 200V 0.014 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK170N20T 功能描述:MOSFET 170A 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK180N07 功能描述:MOSFET 180 Amps 70V 0.006 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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