參數(shù)資料
型號： IXFH20N80Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFETTM Power MOSFETs Q-Class
中文描述： 20 A, 800 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大小： 72K
代理商： IXFH20N80Q
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
800
800
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
20
80
20
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
45
1.5
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
360
W
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Mounting torque
TO-247
TO-264
1.13/10
0.9/6
Nm/lb.in.
Nm/lb.in.
Weight
TO-247
TO-268
TO-264
6
4
g
g
g
10
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
low Q
Avalanche energy and current rated
Fast intrinsic rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
800
2.5
V
V
4.5
200
nA
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
R
DS(on)
0.42
G = Gate
S = Source
TAB = Drain
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
Advanced Technical Information
IXFH20N80Q
IXFK20N80Q
IXFT20N80Q
V
DSS
I
D25
R
DS(on)
= 800 V
= 20 A
= 0.42
t
rr
250 ns
98616 (4/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
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參數(shù)描述
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