參數(shù)資料
型號： IXFH16N90
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁數(shù)： 1/2頁
文件大小： 267K
代理商： IXFH16N90
1998 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
900
900
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
16
64
16
A
A
A
E
AR
dv/dt
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
45
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 5 mA
900
V
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125
°
C
25
°
C
25
μ
A
μ
A
250
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.65
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD
(IXFH)
Features
l
International standard packages
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
l
Temperature and lighting controls
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
l
Space savings
l
High power density
(TAB)
HiPerFET
TM
Power MOSFETs
97547(2/98)
PLUS 247
TM
(IXFX)
GD
C (TAB)
Preliminary data
IXFH16N90
IXFX16N90
V
DSS
I
D25
R
DS(
on
)
= 0.65
W
= 900 V
= 16
A
t
rr
￡
200 ns
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PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
IXFH16N90Q 功能描述:MOSFET 16 Amps 900V 0.65 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH170N10P 功能描述:MOSFET 170 Amps 100V 0.009 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH17N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH17N65 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH17N80Q 功能描述:MOSFET 17 Amps 800V 0.60 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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