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參數(shù)資料
| 型號(hào)： | IXFH14N100Q2 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr |
| 中文描述： | 14 A, 1000 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 564K |
| 代理商： | IXFH14N100Q2 |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
10
14
S
C
iss
C
oss
C
rss
2700
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
100
pF
pF
t
d(on)
t
r
t
d(off)
t
f
12
10
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
(External),
28
12
ns
ns
Q
g(on)
Q
gs
Q
gd
83
20
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
40
nC
R
thJC
0.25
K/W
R
thCK
TO-247
0.25
K/W
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
.170
242
.216
BSC
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ. max.
I
S
V
GS
= 0 V
14
A
I
SM
Repetitive; pulse width limited by T
JM
56
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
300
ns
μ
C
A
0.8
7
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
IXFH14N100Q2
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