參數(shù)資料
型號： IXFHN100
廠商： IXYS Corporation
英文描述： HiPerFET Power MOSFETs
中文描述： HiPerFET功率MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 116K
代理商： IXFHN100
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
14N100
15N100
14N100
15N100
14N100
15N100
14
15
56
60
14
15
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
45
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
1000
2.5
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
14N100
15N100
0.75
0.70
Pulse test, t 300 s, duty cycle d 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD
(IXFH)
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
AC motor control
G
Temperature and lighting controls
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
G
High power surface mountable package
G
High power density
V
DSS
I
D25
R
DS(on)
IXFH/IXFT/IXFX14
N100 1000 V
IXFH/IXFT/IXFX15
N100 1000 V
14 A 0.75
15 A 0.70
t
rr
200 ns
(TAB)
HiPerFET
TM
Power MOSFETs
97535B (1/99)
PLUS 247
TM
(IXFX)
G
D
Preliminary data sheet
TO-268 (D3)
(IXFT)
(TAB)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFTN100 HiPerFET Power MOSFETs
IXFX14N100 HiPerFET Power MOSFETs
IXFX15N100 HiPerFET Power MOSFETs
IXFH14N80 HiPerFET Power MOSFETs
IXFH14N60 HIPERFET Power MOSFTETs
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