參數(shù)資料
型號(hào)： IXFH14N100
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 116K
代理商： IXFH14N100
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
14N100
15N100
14N100
15N100
14N100
15N100
14
15
56
60
14
15
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
45
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
1000
2.5
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
14N100
15N100
0.75
0.70
Pulse test, t 300 s, duty cycle d 2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD
(IXFH)
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
AC motor control
G
Temperature and lighting controls
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247
TM
)
G
High power surface mountable package
G
High power density
V
DSS
I
D25
R
DS(on)
IXFH/IXFT/IXFX14
N100 1000 V
IXFH/IXFT/IXFX15
N100 1000 V
14 A 0.75
15 A 0.70
t
rr
200 ns
(TAB)
HiPerFET
TM
Power MOSFETs
97535B (1/99)
PLUS 247
TM
(IXFX)
G
D
Preliminary data sheet
TO-268 (D3)
(IXFT)
(TAB)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFHN100 HiPerFET Power MOSFETs
IXFTN100 HiPerFET Power MOSFETs
IXFX14N100 HiPerFET Power MOSFETs
IXFX15N100 HiPerFET Power MOSFETs
IXFH14N80 HiPerFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH14N100Q2 功能描述:MOSFET 14 Amps 1000V 0.90 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH14N100Q2_08 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class
IXFH14N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFH14N60P 功能描述:MOSFET 600V 14A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH14N60P3 功能描述:MOSFET Polar3 HiPerFETs Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*