- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383189 > IXFT13N90 (IXYS CORP) HiPerFET Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | IXFT13N90 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 13 A, 900 V, N-CHANNEL, Si, POWER, MOSFET, TO-268 |
| 封裝： | TO-268, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 85K |
| 代理商： | IXFT13N90 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
900
900
V
V
20
30
V
V
T
C
= 25 C
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
10
12
13
40
48
13
10
12
13
A
A
A
A
A
A
A
A
A
I
DM
T
= 25 C,
pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10
Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
900
2.0
V
V
4.5
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
=
T
J
= 125 C
25 C
25
1
A
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
10N90
12N90
13N90
1.1
0.9
0.8
Pulse test, t 300 s, duty cycle d 2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
D
G
V
DSS
900 V
900 V
900 V
t
rr
250 ns
I
D25
10 A
12 A
13 A
R
DS(on)
1.1
0.9
0.8
IXFH/IXFM
10
N90
IXFH/IXFM
12
N90
IXFH13
N90
91530G (3/98)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFH13N80Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.70Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| IXFT13N80Q | HiPerFET Power MOSFETs Q Class |
| IXFH14N100Q2 | N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr |
| IXFH14N100 | HiPerFET Power MOSFETs |
| IXFHN100 | HiPerFET Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFT140N10P | 功能描述:MOSFET 140 Amps 100V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT14N100 | 功能描述:MOSFET 14 Amps 1000V 0.75 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT14N80P | 功能描述:MOSFET 14 Amps 800V 0.72 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT150N17T2 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:TrenchT2 HiperFET Power MOSFET |
| IXFT150N20T | 功能描述:MOSFET Trench HiperFETs Power MOSFETs RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。