參數(shù)資料
型號： IXFH12N100F
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerRF Power MOSFETs
中文描述： 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 99K
代理商： IXFH12N100F
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
12
48
12
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
30
1.0
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
1000
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
50
μ
A
1.5 mA
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
1.05
98856 (8/01)
Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
Space savings
High power density
TO-247 AD (IXFH)
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (IXFT) Case Style
(TAB)
G
S
IXFH 12N100F
IXFT 12N100F
V
DSS
I
D25
R
DS(on)
t
rr
≤
250 ns
= 1000 V
= 12 A
= 1.05
相關(guān)PDF資料
PDF描述
IXFT12N100F HiPerRF Power MOSFETs
IXFH12N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻1.05Ω的N溝道增強型HiPerFET功率MOSFET)
IXFH12N50F N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.4Ω的N溝道增強型HiPerFET功率MOSFET)
IXFT12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH12N90Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導(dǎo)通電阻0.9Ω的N溝道增強型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH12N100F_03 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerRF Power MOSFETs
IXFH12N100P 功能描述:MOSFET 12 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH12N100Q 功能描述:MOSFET 12 Amps 1000V 1.05 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH12N120 功能描述:MOSFET 12 Amps 1200V 1.3 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH12N120P 功能描述:MOSFET 12 Amps 1200V 1.15 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*