參數(shù)資料
型號： IXFH12N100Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻1.05Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 118K
代理商： IXFH12N100Q
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
T
= 25 C,
pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
12
48
A
A
I
AR
E
AR
dv/dt
12
A
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
C
Mounting torque
1.13/10
Nm/lb.in.
TO-247 AD
TO-268
6
4
g
g
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
1000
V
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
2.5
5.5
V
100
nA
T
J
= 25 C
T
J
= 125 C
50
A
1
mA
R
DS(on)
1.05
97539B (11/98)
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
Q Class
TO-268 (D3) (IXFT)
(TAB)
G
S
Preliminary data sheet
V
DSS
I
D25
R
DS(on)
t
rr
= 1000 V
= 12 A
= 1.05
200 ns
IXFH 12N100Q
IXFT 12N100Q
IXYS reserves the right to change limits, test conditions, and dimensions.
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PDF描述
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