型號(hào) | 廠商 | 描述 |
k4s560832e-nc75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification 54pin sTSOP-II |
k4s561632e-uc60 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
k4s560832e-nl75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification 54pin sTSOP-II |
k4s560832e-tc75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification |
k4s560832e-tl75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification |
k4s561632e-uc75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
k4s561632e-ul60 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
k4s560832e-uc75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
k4s561633c-p75 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx16 SDRAM 54CSP |
k4s561633c-rbl 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx16 SDRAM 54CSP |
k4s561633c-rl 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx16 SDRAM 54CSP |
k4s561633c-n 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx16 SDRAM 54CSP |
k4s561633c-p1h 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx16 SDRAM 54CSP |
k4s561633c-p1l 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mx16 SDRAM 54CSP |
k4s56323lf 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323lf-c 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323lf-fe 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323lf-l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323lf-n 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323pf 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323pf-f1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323pf-f75 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323pf-f90 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323pf-fg 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323lf-r1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s56323lf-s 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
k4s640832d 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL |
k4s641632c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
k4s641632d 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
k4s641633h-c 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-f1h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-f1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-f75 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-g 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-n 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-r 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-rbe 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s641633h-re 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-c 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-f1h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-f1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-f75 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-re 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 |
k4s64163lh-n 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 |
k4s64163lh-g 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s64163lh-rbe 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
k4s643232h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 64Mb H-die (x32) SDRAM Specification |