型號(hào) 廠商 描述
k4s560832e-nc75
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SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification 54pin sTSOP-II
k4s561632e-uc60
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
k4s560832e-nl75
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification 54pin sTSOP-II
k4s560832e-tc75
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification
k4s560832e-tl75
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification
k4s561632e-uc75
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
k4s561632e-ul60
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
k4s560832e-uc75
2 3 4 5 6 7 8 9 10 11 12 13 14
SAMSUNG SEMICONDUCTOR CO. LTD. 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
k4s561633c-p75
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx16 SDRAM 54CSP
k4s561633c-rbl
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx16 SDRAM 54CSP
k4s561633c-rl
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx16 SDRAM 54CSP
k4s561633c-n
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx16 SDRAM 54CSP
k4s561633c-p1h
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx16 SDRAM 54CSP
k4s561633c-p1l
2 3 4 5 6 7 8
SAMSUNG SEMICONDUCTOR CO. LTD. 16Mx16 SDRAM 54CSP
k4s56323lf
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323lf-c
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323lf-fe
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323lf-l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323lf-n
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323pf
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323pf-f1l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323pf-f75
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323pf-f90
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323pf-fg
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323lf-r1l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s56323lf-s
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
k4s640832d
2 3 4 5 6 7 8 9 10
SAMSUNG SEMICONDUCTOR CO. LTD. 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
k4s641632c
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
SAMSUNG SEMICONDUCTOR CO. LTD. Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
k4s641632d
2 3 4 5 6 7 8 9 10 11
SAMSUNG SEMICONDUCTOR CO. LTD. Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
k4s641633h-c
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-f1h
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-f1l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-f75
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-g
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-n
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-r
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-rbe
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s641633h-re
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-c
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-f1h
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-f1l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-f75
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-re
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-l
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
k4s64163lh-n
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
k4s64163lh-g
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s64163lh-rbe
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
k4s643232h
2 3 4 5 6 7 8 9 10 11 12
SAMSUNG SEMICONDUCTOR CO. LTD. 64Mb H-die (x32) SDRAM Specification