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參數(shù)資料
| 型號(hào)： | K4S641632C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| 中文描述： | 100萬(wàn)× 16 × 4銀行同步DRAM |
| 文件頁(yè)數(shù)： | 16/42頁(yè) |
| 文件大?。?/td> | 1169K |
| 代理商： | K4S641632C |
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CMOS SDRAM
ELECTRONICS
K4S641632C
1) Read interrupted by Read (BL=4)
3. CAS Interrupt (I)
CLK
CMD
ADD
Note 1
RD
RD
A
B
QA
0
QB
1
QB
2
QB
3
QB
0
QA
0
QB
1
QB
2
QB
3
QB
0
tCCD
Note 2
2) Write interrupted by Write (BL=2)
3) Write interrupted by Read (BL=2)
WR
WR
A
B
tCCD Note 2
DA
0
DB
1
DB
0
tCDL
Note 3
CLK
CMD
ADD
DQ
WR
RD
A
B
tCCD Note 2
tCDL
Note 3
DA
0
QB
1
QB
0
DA
0
QB
1
QB
0
DQ(CL2)
DQ(CL3)
*Note :
1. By " Interrupt", It is meant to stop burst read/write by external command before the end of burst.
By "CAS Interrupt", to stop burst read/write by CAS access ; read and write.
2. t
CCD
: CAS to CAS delay. (=1CLK)
3. t
CDL
: Last data in to new column address delay. (=1CLK)
DQ(CL2)
DQ(CL3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S641632D | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| K4S641633H-C | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F1H | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F1L | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F75 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S641632C-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
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