參數(shù)資料
型號(hào)： K4S641632C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
中文描述： 100萬× 16 × 4銀行同步DRAM
文件頁數(shù)： 38/42頁
文件大?。?/td> 1169K
代理商： K4S641632C
CMOS SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ELECTRONICS
K4S641632C
Burst Read Single bit Write Cycle @Burst Length=2
HIGH
Row Active
(A-Bank)
Row Active
(C-Bank)
Write with
Auto Precharge
(B-Bank)
: Don't care
*Note :
1. BRSW modes is enabled by setting A
9
"High" at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to "1" regardless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that t
RAS
should not be violated.
Auto precharge is executed at the burst-end cycle, so in the case of BRSW write command,
the next cycle starts the precharge.
Write
(A-Bank)
*Note 1
Row Active
(B-Bank)
Read
(C-Bank)
Read with
Auto Precharge
(A-Bank)
Precharge
(C-Bank)
*Note 2
BA
0
BA
1
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
DAa0
DAa0
QAb0
QAb1
QAb0
QAb1
DBc0
DBc0
QCd0
QCd1
QCd0
QCd1
RAa
CAa
RBb
CAb
RCc
CBc
CCd
RAc
RAa
RBb
相關(guān)PDF資料
PDF描述
K4S641632D Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
K4S641633H-C 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F1H 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F75 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S641632C-TC/L10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L1H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L1L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
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