參數(shù)資料
型號: K4S641632C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
中文描述: 100萬× 16 × 4銀行同步DRAM
文件頁數(shù): 33/42頁
文件大?。?/td> 1169K
代理商: K4S641632C
CMOS SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ELECTRONICS
K4S641632C
Read & Write Cycle with Auto Precharge I @Burst Length=4
HIGH
Row Active
(A-Bank)
: Don't care
*Note:
¨*¨When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank
auto precharge will start at B Bank read command input point .
- any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
Row Active
(B-Bank)
Read with
Auto Pre
charge
(A-Bank)
Write with
Auto Precharge
(A-Bank)
Row Active
(A-Bank)
BA
0
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
Qa0
Qa1
Qb0
Qb1
Qa0
Qa1
Qb0
Qb1
Ra
Rb
Ca
Ra
Rb
Ra
Cb
Qb2
Qb3
Read without Auto
precharge(B-Bank)
Auto Precharge
Start Point
(A-Bank)*¨
Precharge
(B-Bank)
Da0
Da1
Da0
Da1
Qb2
Qb3
Ca
Ra
BA
1
相關(guān)PDF資料
PDF描述
K4S641632D Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
K4S641633H-C 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F1H 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F1L 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S641633H-F75 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S641632C-TC/L10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L1H 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L1L 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L60 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM
K4S641632C-TC/L70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM