參數(shù)資料
型號: K4S641632C
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
中文描述: 100萬× 16 × 4銀行同步DRAM
文件頁數(shù): 36/42頁
文件大?。?/td> 1169K
代理商: K4S641632C
CMOS SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ELECTRONICS
K4S641632C
Read Interrupted by Precharge Command & Read Burst Stop Cycle @Burst Length=Full page
HIGH
Row Active
(A-Bank)
: Don't care
*Note :
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
3. Burst stop is valid at every burst length.
Precharge
(A-Bank)
Burst Stop
Read
(A-Bank)
Read
(A-Bank)
1
2
1
2
BA
0
BA
1
A
10
/AP
CL=2
CL=3
DQ
ADDR
CAS
RAS
CS
CKE
CLOCK
WE
DQM
QAa0
QAa1 QAa2
QAa3 QAa4
QAa0
QAa1
QAa2
QAa3 QAa4
QAb0
QAb1
QAb2
QAb3 QAb4 QAb5
QAb0
QAb1 QAb2 QAb3
QAb4 QAb5
RAa
CAa
CAb
RAa
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