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參數(shù)資料
| 型號(hào)： | K4S641632C |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| 中文描述： | 100萬(wàn)× 16 × 4銀行同步DRAM |
| 文件頁(yè)數(shù)： | 22/42頁(yè) |
| 文件大?。?/td> | 1169K |
| 代理商： | K4S641632C |
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CMOS SDRAM
ELECTRONICS
K4S641632C
X
X
X
CA, A
10
/AP
RA
A
10
/AP
X
OP code
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
CA, A
10
/AP
RA
A
10
/AP
X
X
X
X
CA, A
10
/AP
RA, RA
10
X
X
X
X
CA, A
10
/AP
RA, RA
10
X
X
X
X
CA
RA
A
10
/AP
FUNCTION TRUTH TABLE (TABLE 1)
Current
State
CS
RAS
CAS
WE
BA
ADDR
ACTION
Note
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
IDLE
Row
Active
Read
Write
Read with
Auto
Precharge
Write with
Auto
Precharge
Pre-
charging
NOP
NOP
ILLEGAL
ILLEGAL
Row (& Bank) Active ; Latch RA
NOP
Auto Refresh or Self Refresh
Mode Register Access
NOP
NOP
ILLEGAL
Begin Read ; latch CA ; determine AP
Begin Write ; latch CA ; determine AP
ILLEGAL
Precharge
ILLEGAL
NOP (Continue Burst to End --> Row Active)
NOP (Continue Burst to End --> Row Active)
Term burst --> Row active
Term burst, New Read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, Precharge timing for Reads
ILLEGAL
NOP (Continue Burst to End --> Row Active)
NOP (Continue Burst to End --> Row Active)
Term burst --> Row active
Term burst, New read, Determine AP
Term burst, New Write, Determine AP
ILLEGAL
Term burst, precharge timing for Writes
ILLEGAL
NOP (Continue Burst to End --> Precharge)
NOP (Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Continue Burst to End --> Precharge)
NOP (Continue Burst to End --> Precharge)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RP
NOP --> Idle after t
RP
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
RP
L
X
X
X
BA
BA
BA
X
OP code
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
X
X
X
X
BA
BA
BA
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
H
L
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
H
L
L
X
H
H
L
H
H
L
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
L
H
H
L
X
H
H
L
H
L
X
H
H
L
H
L
X
H
H
L
H
H
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
X
H
L
X
H
L
2
2
4
5
5
2
2
3
2
3
3
2
3
2
2
2
2
2
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S641632D | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| K4S641633H-C | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F1H | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S641632C-TC/L10 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L1H | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L60 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
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