- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373068 > K4S561633C-RBL (SAMSUNG SEMICONDUCTOR CO. LTD.) 16Mx16 SDRAM 54CSP PDF資料下載
參數(shù)資料
| 型號(hào)： | K4S561633C-RBL |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16Mx16 SDRAM 54CSP |
| 中文描述： | 16Mx16顯示內(nèi)存54CSP |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 59K |
| 代理商： | K4S561633C-RBL |
K4S561633C-R(B)L/N/P
Rev. 1.4 Dec. 2002
CMOS SDRAM
3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1 & 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
DQM for masking
Auto refresh.
64ms refresh period (8K cycle).
Commercial Temperature Operation (-25
°
C ~ 70
°
C).
Extended Temperature Operation ( -25
°
C ~ 85
°
C).
Inderstrial Temperature Operation ( -40
°
C ~ 85
°
C).
54balls CSP (-RXXX - Pb, -BXXX - Pb Free)
FEATURES
GENERAL DESCRIPTION
The K4S561633C is 268,435,456 bits synchronous high data rate
Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabri-
cated with SAMSUNG's high performance CMOS technology. Syn-
chronous design allows precise cycle control with the use of
system clock and I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst length
and programmable latencies allow the same device to be useful for
a variety of high bandwidth, high performance memory system
applications.
ORDERING INFORMATION
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP
FUNCTIONAL BLOCK DIAGRAM
Bank Select
Data Input Register
4M x 16
4M x 16
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
L(U)DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
4M x 16
4M x 16
Timing Register
* Samsung Electronics reserves the right to change products or specification without notice.
-R(B)L ; Low Power, Operating Temp : -25
°
C ~ 70
°
C.
-R(B)N ; Low Power, Operating Temp : -25
°
C ~ 85
°
C.
-R(B)P : Low Power, Operating Temp : -40
°
C ~ 85
°
C.
Note :
1. In case of 40MHz Frequency, CL1 can be supported.
Part No.
Max Freq.
Interface Package
K4S561633C-R(B)L/N/P75
133MHz(CL=3)
105MHz(CL=2)
LVCMOS
54 CSP
Pb
(Pb Free)
K4S561633C-R(B)L/N/P1H
105MHz(CL=2)
K4S561633C-R(B)L/N/P1L
105MHz(CL=3)
*1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S561633C-RL | 16Mx16 SDRAM 54CSP |
| K4S561633C-N | 16Mx16 SDRAM 54CSP |
| K4S561633C-P1H | 16Mx16 SDRAM 54CSP |
| K4S561633C-P1L | 16Mx16 SDRAM 54CSP |
| K4S56323LF | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S561633C-RL | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16Mx16 SDRAM 54CSP |
| K4S561633F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
| K4S561633F-F1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。