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參數(shù)資料
| 型號： | K4S56323LF-N |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 2米x 32Bit的× 4銀行在90FBGA移動SDRAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 140K |
| 代理商： | K4S56323LF-N |
K4S56323LF - F(H)E/N/S/C/L/R
May 2004
1
Mobile-SDRAM
VDD/VDDQ = 2.5V/2.5V
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs.
-. CAS latency (1, 2 & 3).
-. Burst length (1, 2, 4, 8 & Full page).
-. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation.
Special Function Support.
-. PASR (Partial Array Self Refresh).
-. Internal TCSR (Temperature Compensated Self Refresh)
DQM for masking.
Auto refresh.
64ms refresh period (4K cycle).
Commercial Temperature Operation (-25
°
C ~ 70
°
C).
Extended Temperature Operation (-25
°
C ~ 85
°
C).
90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
FEATURES
The K4S56323LF is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,
fabricated with SAMSUNG’s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock and I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications.
GENERAL DESCRIPTION
ORDERING INFORMATION
- F(H)E/N/S : Normal/Low/Super Low Power, Extended Temperature(-25
°
C ~ 85
°
C)
- F(H)C/L/R : Normal/Low/Super Low Power, Commercial Temperature(-25
°
C ~ 70
°
C)
NOTES :
1. In case of 40MHz Frequency, CL1 can be supported.
2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.
Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur
pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.
Part No.
Max Freq.
Interface
Package
K4S56323LF-F(H)E/N/S/C/L/R60
166MHz(CL=3)
LVCMOS
90 FBGA Pb
(Pb Free)
K4S56323LF-F(H)E/N/S/C/L/R75
133MHz(CL=3),111MHz(CL=2)
K4S56323LF-F(H)E/N/S/C/L/R1H
111MHz(CL=2)
K4S56323LF-F(H)E/N/S/C/L/R1L
111MHz(CL=3)*1
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S56323PF | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F1L | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F75 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F90 | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-FG | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S56323LF-R1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323LF-S | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| K4S56323PF-F75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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