參數(shù)資料
型號(hào)： K4S560832E-NC75
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Mb E-die SDRAM Specification 54pin sTSOP-II
中文描述： 256Mb的電子芯片內(nèi)存規(guī)格54pin sTSOP -Ⅱ
文件頁(yè)數(shù)： 7/14頁(yè)
文件大?。?/td> 198K
代理商： K4S560832E-NC75
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°
C
W
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DD
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
Note
1
2
I
OH
= -2mA
I
OL
= 2mA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Pin
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
2.5
2.5
2.5
4.0
Max
3.5
3.8
3.8
6.0
Unit
pF
pF
pF
pF
Note
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
0
~ DQ
3
), (x8 : DQ
0
~ DQ
7
), (x16 : DQ
0
~ DQ
15
)
相關(guān)PDF資料
PDF描述
K4S561632E-UC60 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
K4S560832E-NL75 256Mb E-die SDRAM Specification 54pin sTSOP-II
K4S560832E-TC75 256Mb E-die SDRAM Specification
K4S560832E-TL75 256Mb E-die SDRAM Specification
K4S561632E-UC75 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S560832E-NL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54pin sTSOP-II
K4S560832ETC75 制造商:Samsung Semiconductor 功能描述:
K4S560832E-TC75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification
K4S560832E-TL75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification
K4S560832E-UC75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
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