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參數(shù)資料
| 型號(hào)： | K4S560832E-TC75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification |
| 中文描述： | 256Mb的電子芯片內(nèi)存規(guī)格 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | K4S560832E-TC75 |
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SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
AC OPERATING TEST CONDITIONS
(V
DD
= 3.3V
±
0.3V, T
A
= 0 to 70
°
C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
Value
2.4/0.4
1.4
tr/tf = 1/1
1.4
See Fig. 2
Unit
V
V
ns
V
3.3V
1200
870
Output
50pF
V
OH
(DC) = 2.4V, I
OH
= -2mA
V
OL
(DC) = 0.4V, I
OL
= 2mA
Vtt = 1.4V
50
Output
50pF
Z0 = 50
(Fig. 2) AC output load circuit
(Fig. 1) DC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Symbol
Version
Unit
Note
60
12
18
18
42
75
15
20
20
45
Row active to row active delay
RAS to CAS delay
Row precharge time
t
RRD
(min)
t
RCD
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
ns
ns
ns
ns
us
1
1
1
1
Row active time
100
Row cycle time
t
RC
(min)
60
65
ns
1
Last data in to row precharge
Last data in to Active delay
Last data in to new col. address delay
Last data in to burst stop
Col. address to col. address delay
t
RDL
(min)
t
DAL
(min)
t
CDL
(min)
t
BDL
(min)
t
CCD
(min)
2
CLK
-
CLK
CLK
CLK
2, 5
5
2
2
3
2 CLK + tRP
1
1
1
2
Number of valid output data
CAS latency=3
CAS latency=2
ea
4
-
1
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
5. In 100MHz and below 100MHz operating conditions, tRDL=1CLK and tDAL=1CLK + 20ns is also supported.
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + tRP.
Notes :
相關(guān)PDF資料 |
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| K4S561632E-UL60 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832E-UC75 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S560832E-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
| K4S560832E-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832E-UL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
| K4S560832J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory |
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