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參數(shù)資料
| 型號： | K4S560832E-TC75 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification |
| 中文描述： | 256Mb的電子芯片內(nèi)存規(guī)格 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 198K |
| 代理商： | K4S560832E-TC75 |
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
Part No.
Orgainization
64M x 4
32M x 8
16M x 16
Max Freq.
133MHz
133MHz
133MHz
Interface
LVTTL
LVTTL
LVTTL
Package
54pin TSOP(II)
54pin TSOP(II)
54pin TSOP(II)
K4S560432E-UC(L)75
K4S560832E-UC(L)75
K4S561632E-UC(L)60/75
The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x
16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchro-
nous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of oper-
ating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation
DQM (x4,x8) & L(U)DQM (x16) for masking
Auto & self refresh
64ms refresh period (8K Cycle)
54 TSOP(II)
Pb-free Package
RoHS compliant
GENERAL DESCRIPTION
FEATURES
16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM
Ordering Information
Row & Column address configuration
Organization
64Mx4
32Mx8
16Mx16
Row Address
A0~A12
A0~A12
A0~A12
Column Address
A0-A9, A11
A0-A9
A0-A8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S560832E-TL75 | 256Mb E-die SDRAM Specification |
| K4S561632E-UC75 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S561632E-UL60 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832E-UC75 | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S561633C-P75 | 16Mx16 SDRAM 54CSP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S560832E-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification |
| K4S560832E-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832E-UL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S560832H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
| K4S560832J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Consumer Memory |
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