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參數(shù)資料
| 型號(hào)： | K4S64163LH-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 100萬× 16 × 4銀行在54FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | K4S64163LH-L |
K4S64163LH - R(B)E/N/G/C/L/F
February 2004
Mobile-SDRAM
VDDQ
500
500
Output
30pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
Vtt=0.5 x VDDQ
50
Output
30pF
Z0=50
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
AC OPERATING TEST CONDITIONS
(V
DD
= 2.5V
±
0.2V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
0.9 x V
DDQ
/ 0.2
V
Input timing measurement reference level
0.5 x V
DDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x V
DDQ
V
Output load condition
See Figure 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S64163LH-N | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 |
| K4S64163LH-G | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-RBE | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S643232H | 64Mb H-die (x32) SDRAM Specification |
| K4S643232H-TC50 | 64Mb H-die (x32) SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S64163LH-N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-RBE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-RE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S643232C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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