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| 型號(hào)： | K4S561632E-UL60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 256Mb的電子芯片與內(nèi)存規(guī)格鉛54 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 198K |
| 代理商： | K4S561632E-UL60 |
SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Unit
V
V
°
C
W
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DD
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
Note
1
2
I
OH
= -2mA
I
OL
= 2mA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
=1.4V
±
200
mV)
Pin
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
2.5
2.5
2.5
4.0
Max
3.5
3.8
3.8
6.0
Unit
pF
pF
pF
pF
Note
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
0
~ DQ
3
), (x8 : DQ
0
~ DQ
7
), (x16 : DQ
0
~ DQ
15
)
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