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參數(shù)資料
| 型號(hào)： | K4S641633H-RE |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| 中文描述： | 100萬(wàn)× 16 × 4銀行在54FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | K4S641633H-RE |
K4S641633H - R(B)E/N/G/C/L/F
February 2004
Mobile-SDRAM
Register Programmed with Extended MRS
Address
BA1
BA0
A11 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
Mode Select
RFU
*1
DS
RFU
*1
PASR
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
1
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
Mode Select
0
1
0
4
4
1
1
Reserved
0
1
1
3
BA1 BA0
Mode
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
0
0
Setting
for Nor-
mal MRS
1
0
0
Reserved
Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved
Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page
Reserved
Full Page Length x16 : 64Mb(256)
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A11 ~ A10/AP
A9
*2
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
"0" Setting for
Normal MRS
RFU
*1
W.B.L
Test Mode
CAS Latency
BT
Burst Length
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
NOTES:
1.RFU(Reserved for future use) should stay "0" during MRS cycle.
2.If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Mode Select
Driver Strength
PASR
BA1
BA0
Mode
A6
A5
Driver Strength
A2
A1
A0
Size of Refreshed Array
0
0
Normal MRS
0
0
Full
0
0
0
Full Array
0
1
Reserved
0
1
1/2
0
0
1
1/2 of Full Array
1
0
EMRS for Mobile SDRAM
1
0
Reserved
0
1
0
1/4 of Full Array
1
1
Reserved
1
1
Reserved
0
1
1
Reserved
Reserved Address
1
0
0
Reserved
A11~A10/AP
A9
A8
A7
A4
A3
1
0
1
Reserved
0
0
0
0
0
0
1
1
0
Reserved
1
1
1
Reserved
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S64163LH-C | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-F1H | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-F1L | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-F75 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-RE | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S64163LH | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-F1H | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-F1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-F75 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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