參數(shù)資料
型號(hào): K4S56323PF-F90
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
中文描述: 2米x 32Bit的× 4銀行在90FBGA移動(dòng)SDRAM
文件頁數(shù): 5/12頁
文件大?。?/td> 140K
代理商: K4S56323PF-F90
K4S56323LF - F(H)E/N/S/C/L/R
May 2004
5
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 85
°
C for Extended, -25 to 70
°
C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : Max 40
°
C/Max 70
°
C, In extended Temp : Max 40
°
C/Max 85
°
C
4. K4S56323LF-F(H)E/C**
5. K4S56323LF-F(H)N/L**
6. K4S56323LF-F(H)S/R**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-60
-75
-1H
-1L
Operating Current
(One Bank Active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
110
100
100
90
mA
1
Precharge Standby Current
in power-down mode
I
CC
2P
CKE
V
IL
(max), t
CC
= 10ns
0.5
mA
I
CC
2PS CKE & CLK
V
IL
(max), t
CC
=
0.5
Precharge Standby Current
in non power-down mode
I
CC
2N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during
20ns
20
mA
I
CC
2NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
8
Active Standby Current
in power-down mode
I
CC
3P
CKE
V
IL
(max), t
CC
= 10ns
4
mA
I
CC
3PS CKE & CLK
V
IL
(max), t
CC
=
2
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC
3N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during
20ns
30
mA
I
CC
3NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
20
mA
Operating Current
(Burst Mode)
I
CC
4
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
120
100
90
90
mA
1
Refresh Current
I
CC
5
t
RC
t
RC
(min)
200
180
170
150
mA
2
Self Refresh Current
I
CC
6
CKE
0.2V
-E/C
1500
uA
4
-N/L
600
5
-S/R
Internal TCSR
Max 40
Max 85/70
°
C
3
Full Array
450
600
uA
6
1/2 of Full Array
400
450
1/4 of Full Array
350
400
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