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參數(shù)資料
| 型號： | K4S64163LH-N |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 100萬× 16 × 4銀行在54FBGA移動SDRAM |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 112K |
| 代理商： | K4S64163LH-N |
K4S64163LH - R(B)E/N/G/C/L/F
February 2004
Mobile-SDRAM
1. In order to save power consumption, Mobile SDRAM has PASR option.
2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode :Full Array, 1/2 of Full Array and 1/4 of Full Array.
BA1=0
BA0=0
Partial Self Refresh Area
1. Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
6. Issue a extended mode register set command to define DS or PASR operating type of the device after normal MRS.
EMRS cycle is not mandatory and the EMRS command needs to be issued only when DS or PASR is used.
The default state without EMRS command issued is full driver strength and full array refreshed.
The device is now ready for the operation selected by EMRS.
For operating with DS or PASR , set DS or PASR mode in EMRS setting stage.
In order to adjust another mode in the state of DS or PASR mode, additional EMRS set is required but power up sequence is not
needed again at this time. In that case, all banks have to be in idle state prior to adjusting EMRS set.
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
BA1=1
BA0=1
BA1=1
BA0=0
BA1=0
BA0=1
BA1=0
BA0=0
BA1=0
BA0=1
BA1=1
BA0=1
BA1=1
BA0=0
Partial Array Self Refresh
B. POWER UP SEQUENCE
Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, Mobile-DRAM includes the internal temperature sensor and control units to control the self
refresh cycle automatically according to the two temperature range : Max 40
°
C and Max 85
°
C(for Extended), Max 70
°
C(for
Commercial).
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Temperature Range
Self Refresh Current (Icc6)
Unit
- E/C
- N/L
- G/F
Full Array
1/2 of Full Array
1/4 of Full Array
Max 85/70
°
C
500
300
300
240
220
uA
Max 40
°
C
185
160
145
- Full Array
- 1/2 Array
- 1/4 Array
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S64163LH-G | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-RBE | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S643232H | 64Mb H-die (x32) SDRAM Specification |
| K4S643232H-TC50 | 64Mb H-die (x32) SDRAM Specification |
| K4S643232H-TC55 | 64Mb H-die (x32) SDRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S64163LH-RBE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S64163LH-RE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S643232C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
| K4S643232C-TC/L55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
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