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| 型號(hào)： | K4S561632E-UC60 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| 中文描述： | 256Mb的電子芯片與內(nèi)存規(guī)格鉛54 TSOP-II免費(fèi)（符合RoHS） |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 198K |
| 代理商： | K4S561632E-UC60 |
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SDRAM 256Mb E-die (x4, x8, x16)
CMOS SDRAM
Rev. 1.3 August 2004
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit Note
60
75
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4banks Activated.
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
140
90
mA
1
Precharge standby current in
power-down mode
I
CC2
P
2
mA
I
CC2
PS
2
Precharge standby current in
non power-down mode
I
CC2
N
20
mA
I
CC2
NS
10
Active standby current in
power-down mode
I
CC3
P
6
mA
I
CC3
PS
6
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
25
mA
I
CC3
NS
25
mA
Operating current
(Burst mode)
I
CC4
170
130
mA
1
Refresh current
I
CC5
200
180
mA
mA
mA
2
3
4
Self refresh current
I
CC6
CKE
≤
0.2V
C
L
3
1.5
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561632E-UC
4. K4S561632E-UL
5. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
DC CHARACTERISTICS (x16)
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相關(guān)代理商/技術(shù)參數(shù) |
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| K4S561632E-UC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S561632E-UL60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S561632E-UL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| K4S561632H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:SDRAM Product Guide |
| K4S561632J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb J-die SDRAM Specification |
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