參數資料
型號: ADUC834
廠商: Analog Devices, Inc.
英文描述: MicroConverter, Dual 16-/24- Bit ADCs with Embedded 62KB FLASH MCU
中文描述: MicroConverter的,雙與嵌入62KB閃存MCU 16-/24-位ADC
文件頁數: 7/72頁
文件大?。?/td> 1451K
代理商: ADUC834
REV.
P
rC (12 March 2002)
–7–
ADuC834
PRELIMINARY TECHNICAL DATA
Parameter
ADuC834BS
T est Conditions/Comments
Unit
POWER REQUIREMENT S (continued)
Power Supply Currents Normal Mode
17, 18
DV
DD
Current
4
2.1
170
15
8
170
DV
DD
= 4.75 V to 5.25 V, Core CLK = 1.57 MHz
DV
DD
= 2.7 V to 3.6 V, Core CLK = 1.57 MHz
AV
DD
= 5.25 V, Core CLK = 1.57 MHz
DV
DD
= 4.75 V to 5.25 V, Core CLK = 12.58 MHz
DV
DD
= 2.7 V to 3.6 V, Core CLK = 12.58 MHz
AV
DD
= 5.25 V, Core CLK = 12.58 MHz
mA max
mA max
μA max
mA max
mA max
μA max
AV
DD
Current
DV
DD
Current
AV
DD
Current
Power Supply Currents Idle Mode
17, 18
DV
DD
Current
1.2
750
140
2
1
140
DV
DD
= 4.75 V to 5.25 V, Core CLK = 1.57 MHz
DV
DD
= 2.7 V to 3.6 V, Core CLK = 1.57 MHz
Measured @ AV
DD
= 5.25 V, Core CLK = 1.57 MHz μA typ
DV
DD
= 4.75 V to 5.25 V, Core CLK = 12.58 MHz
DV
DD
= 2.7 V to 3.6 V, Core CLK = 12.58 MHz
Measured at AV
DD
= 5.25 V, Core CLK = 12.58 MHz μA typ
Core CLK = 1.57 MHz or 12.58 MHz
DV
DD
= 4.75 V to 5.25 V, Osc. On, T IC On
DV
DD
= 2.7 V to 3.6 V, Osc. On, T IC On
Measured at AV
DD
= 5.25 V, Osc. On or Osc. Off
DV
DD
= 4.75 V to 5.25 V, Osc. Off
DV
DD
= 2.7 V to 3.6 V, Osc. Off
Core CLK = 1.57 MHz, AV
DD
= DV
DD
= 5 V
mA max
μA typ
AV
DD
Current
DV
DD
Current
mA typ
mA typ
AV
DD
Current
Power Supply Currents Power-Down Mode
17, 18
DV
DD
Current
50
20
1
20
5
μA max
μA max
μA max
μA max
μA typ
AV
DD
Current
DV
DD
Current
T ypical Additional Power Supply Currents
(AI
DD
and DI
DD
)
PSM Peripheral
Primary ADC
Auxiliary ADC
DAC
Dual Current Sources
50
1
500
150
400
μA typ
mA typ
μA typ
μA typ
μA typ
NOT ES
T emperature Range –40°C to +85°C.
2
T hese numbers are not production tested but are guaranteed by Design and/or Characterization data on production release.
3
System Zero-Scale Calibration can remove this error.
4
T he primary ADC is factory calibrated at 25°C with AV
= DV
= 5 V yielding this full-scale error of 10 μV. If user power supply or temperature conditions
are significantly different than these, an Internal Full-Scale Calibration will restore this error to 10 μV. A system zero-scale and full-scale calibration will remove
this error altogether.
5
Gain Error Drift is a span drift. T o calculate Full-Scale Error Drift, add the Offset Error Drift to the Gain Error Drift times the full-scale input.
6
T he auxiliary ADC is factory calibrated at 25°C with AV
DD
= DV
DD
= 5 V yielding this full-scale error of –2.5 LSB. A system zero-scale and full-scale calibration
will remove this error altogether.
7
DAC linearity and AC Specifications are calculated using:
reduced code range of 48 to 4095, 0 to V
REF
,
reduced code range of 48 to 3995, 0 to V
.
8
Gain Error is a measure of the span error of the DAC.
9
In general terms, the bipolar input voltage range to the primary ADC is given by Range
= ±(V
REF
2
RN
)/125, where:
V
= REFIN(+) to REFIN(–) voltage and V
REF
= 1.25 V when internal ADC V
REF
is selected.
RN = decimal equivalent of RN2, RN1, RN0,
e.g., V
= 2.5 V and RN2, RN1, RN0 = 1, 1, 0 the Range
= ±1.28 V.
In unipolar mode the effective range is 0 V to 1.28 V in our example.
10
1.25 V is used as the reference voltage to the ADC when internal V
is selected via X REF0 and X REF1 bits in ADC0CON and ADC1CON respectively.
11
In bipolar mode, the Auxiliary ADC can only be driven to a minimum of A
– 30 mV as indicated by the Auxiliary ADC absolute AIN voltage limits. T he
bipolar range is still –V
to +V
; however, the negative voltage is limited to –30 mV.
12
Pins configured in SPI mode, pins configured as digital inputs during this test.
13
Pins configured in High Current Output mode only.
14
Flash/EE Memory Reliability Characteristics apply to both the Flash/EE program memory and Flash/EE data memory.
15
Endurance is qualified to 100 K cycles as per JEDEC Std. 22 method A117 and measured at –40°C, +25°C and +85°C, typical endurance at 25°C is 700
K cycles.
16
Retention lifetime equivalent at junction temperature (T
) = 55°C as per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of
0.6eV will derate with junction temperature as shown in Figure 27 in the Flash/EE Memory description section of this data sheet.
17
Power Supply current consumption is measured in Normal, Idle, and Power-Down Modes under the following conditions:
Normal Mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, Core Executing internal software loop.
Idle Mode: Reset = 0.4 V, Digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON, PCON.0 = 1, Core Execution suspended in idle mode.
Power-Down Mode: Reset = 0.4 V, All P0 pins and P1.2–P1.7 pins = 0.4 V, All other digital I/O pins are open circuit, Core Clk changed via CD bits in
PLLCON, PCON.1 = 1, Core Execution suspended in power-down mode, OSC turned ON or OFF via OSC_PD bit (PLLCON.7) in
PLLCON SFR.
18
DV
DD
power supply current will increase typically by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
Specifications subject to change without notice
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