參數(shù)資料
型號(hào): 28F016XS
廠商: Intel Corp.
英文描述: 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
中文描述: 16兆位同步閃存(1,600位同步閃速存儲(chǔ)器)
文件頁(yè)數(shù): 44/54頁(yè)
文件大?。?/td> 830K
代理商: 28F016XS
28F016XS FLASH MEMORY
E
44
5.9
V
CC
= 3.3V ± 5%, T
A
= 0°C to +70°C
AC Characteristics for CE
X
#
—Controlled Write Operations
(1)
Versions
28F016XS-20
28F016XS-25
Symbol
Parameter
Notes
Min
Typ
Max
Min
Typ
Max
Unit
t
AVAV
Write Cycle Time
80
75
ns
t
VPEH
1,2
V
Setup to CE
X
# Going
High
3,7
100
100
ns
t
PHWL
RP# Setup to WE# Going
Low
3
480
480
ns
t
WLEL
WE# Setup to CE
X
# Going
Low
3,7
0
0
ns
t
AVEH
Address Setup to CE
X
#
Going High
2,6,7
60
60
ns
t
DVEH
Data Setup to CE
X
# Going
High
2,6,7
60
60
ns
t
ELEH
CE
X
# Pulse Width
7
65
60
ns
t
EHDX
Data Hold from CE
X
# High
2,7
10
10
ns
t
EHAX
Address Hold from CE
X
#
High
2,7
10
10
ns
t
EHWH
WE hold from CE
X
# High
3,7
5
5
ns
t
EHEL
CE
X
# Pulse Width High
7
15
15
ns
t
GHEL
Read Recovery before
Write
3
0
0
ns
t
EHRL
CE
# High to RY/BY#
Going Low
3,7
100
100
ns
t
RHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
3
0
0
ns
t
PHEL
RP# High Recovery to
CE
X
# Going Low
3,7
480
480
ns
t
EHCH
Write Recovery before
Read
20
20
ns
t
QVVL
1,2
V
Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
3
0
0
μs
t
EHQV
1
Duration of Program
Operation
3,4,5,8
5
9
TBD
5
9
TBD
μs
t
EHQV
2
Duration of Block Erase
Operation
3,4
0.6
1.6
20
0.6
1.6
20
sec
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