參數(shù)資料
型號: 28F016XS
廠商: Intel Corp.
英文描述: 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器)
中文描述: 16兆位同步閃存(1,600位同步閃速存儲器)
文件頁數(shù): 19/54頁
文件大?。?/td> 830K
代理商: 28F016XS
E
4.4
28F016XS FLASH MEMORY
19
28F016XS
—Enhanced Command Bus Definitions
First Bus Cycle
Second Bus Cycle
Command
Notes
Oper
Addr
Data
(4)
Oper
Addr
Data
(4)
Read Extended Status Register
1
Write
X
xx71H
Read
RA
GSRD
BSRD
Lock Block/Confirm
Write
X
xx77H
Write
BA
xxD0H
Upload Status Bits/Confirm
2
Write
X
xx97H
Write
X
xxD0H
Device Configuration
3
Write
X
xx96H
Write
X
DCCD
ADDRESS
DATA
BA = Block Address
AD = Array Data
RA = Extended Register Address
BSRD = BSR Data
PA = Program Address
GSRD = GSR Data
X = Don’t Care
DCCD = Device Configuration Code Data
NOTES:
1. RA can be the GSR address or any BSR address. See Figures 5 and 6 for Extended Status Register memory maps.
2. Upon device power-up, all BSR lock-bits come up locked. The Upload Status Bits command must be written to reflect the
actual lock-bit status.
3. This command sets the SFI Configuration allowing the device to be optimized for the specific sytem operating frequency.
4. The upper byte of the Data bus (D
8
–15
) during command writes is a
“Don’t Care” in x16 operation of the device.
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