參數(shù)資料
型號: 28F016XS
廠商: Intel Corp.
英文描述: 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器)
中文描述: 16兆位同步閃存(1,600位同步閃速存儲器)
文件頁數(shù): 30/54頁
文件大?。?/td> 830K
代理商: 28F016XS
28F016XS FLASH MEMORY
E
30
5.5
V
CC
= 5.0V ± 5%, T
A
= 0°C to +70°C
3/5# = Pin Set Low for 5.0V Operations
DC Characteristics
Symbol
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
I
LI
Input Load Current
1
± 1
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
OUT
= V
CC
or GND
V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# = V
CC
±
0.2V
BYTE#, WP#, 3/5# = V
CC
±
0.2V or GND ± 0.2V
V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# = V
IH
BYTE#, WP#, 3/5# = V
IH
or
V
IL
RP# = GND ± 0.2V
BYTE# = V
CC
± 0.2V or
GND ± 0.2V
V
CC
= V
CC
Max
CMOS: CE
0
# ,CE
1
# = GND
± 0.2V, BYTE# = GND ±
0.2V or V
CC
± 0.2V,
Inputs = GND ± 0.2V or
V
CC
± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 33 MHz, I
OUT
= 0 mA
V
CC
= V
CC
Max
CMOS: CE
0
#, CE
1
# = GND
± 0.2V, BYTE# = GND ±
0.2V, or V
CC
± 0.2V,
Inputs = GND ± 0.2V or
V
CC
± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 20 MHz, I
OUT
= 0 mA
I
LO
Output Leakage
Current
1
± 10
μA
I
CCS
V
CC
Standby
Current
1,5
70
130
μA
2
4
mA
I
CCD
V
CC
Deep Power-
Down Current
1
2
5
μA
I
CCR1
V
CC
Read Current
1,4,5
120
175
mA
I
CCR2
V
CC
Read Current
1,4,
5,6
105
150
mA
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