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參數(shù)資料
| 型號： | 28F016XS |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器) |
| 中文描述： | 16兆位同步閃存（1,600位同步閃速存儲器） |
| 文件頁數(shù)： | 1/54頁 |
| 文件大?。?/td> | 830K |
| 代理商： | 28F016XS |
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E
November 1996
Order Number: 290532-004
n
Effective Zero Wait-State Performance
up to 33 MHz
Synchronous Pipelined Reads
n
SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
n
0.33 MB/sec Write Transfer Rate
n
Configurable x8 or x16 Operation
n
56-Lead TSOP and SSOP Type I
Package
n
Backwards-Compatible with 28F008SA
Command-Set
n
2 μA Typical Deep Power-Down
n
1 mA Typical Active I
CC
Current in
Static Mode
n
16 Separately-Erasable/Lockable
128-Kbyte Blocks
n
1 Million Erase Cycles per Block
n
State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing
truly revolutionary high-performance products. Combining very high read performance with the intrinsic
nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of
shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for
improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-
execute code and mass storage data/file flash memory systems.
The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution
available today. Its synchronous pipelined read interface, flexible V
and V
voltages, extended cycling,
fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a
highly flexible memory component suitable for resident flash component arrays on the system board or
SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface
with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read
performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at
either 3.3V or 5.0V V
. Programming voltage at 5V V
minimizes external circuitry in minimal-chip, space
critical designs, while the 12.0V V
option maximizes program/erase performance. Its high read performance
combined with flexible block locking enable both storage and execution of operating systems/application
software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 μm ETOX IV
process technology.
28F016XS
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
SYNCHRONOUS FLASH MEMORY
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